v3 gaas pin diode chips advanced: data sheets contain information regarding a product m/a-com technology solutions is considering for development. performance is based on target specifications, simulated results, and/or prototype measurements. commitment to develop is not guaranteed. preliminary: data sheets contain information regarding a product m/a-com technology solutions has under development. performance is based on engineering tests. specifications are typical. mechanical outline has been fixed. engineering samples and/or test data may be available. commitment to produce in volume is not guaranteed. ? north america tel: 800.366.2266 ? europe tel: +353.21.244.6400 ? india tel: +91.80.43537383 ? china tel: +86.21.2407.1588 visit www.macomtech.com for addi tional data sheets and product information. m/a-com technology solutions inc. and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice. 1 features ? may be driven directly by ttl signals ? rohs compliant ? low series resistance ? fast switching speed ? no reverse bias required ? rohs compliant description gallium arsenide pin diodes offer improved performance characteristics over silicon in many microwave semiconductor applications. these benefits result from the intrinsic semiconductor properties of gaas. its inherent high carrier mobility results in a low resistance fast switching device. the low carrier concentration in the i region layer produces a near zero punch through bias voltage. gallium arsenide's high band gap also assures it will operate at high operating temperatures. switching speeds in the low nanosecond range using an inexpensive ttl buffer logic is attainable with gaas pin diodes. this performance can be achieved because gaas pin diodes exhibit high impedance at a positive bias (up to .5v). reverse bias is not required for many gaas pin diode applications. low loss, in switch and phase shifter circuits at frequencies up to 40 ghz is possible as a result of low parasitic series resistance in the conducting and non-conducting states. m/a-com?s technology solutions gaas pin diode chips are also available in several different package styles. (see page 4 of this datasheet) 1. exceeding these limits may cause permanent damage. anode full area cathode absolute maximum ratings 1 mil-std 750 environmental ratings parameter method level temp. cycling 1051 5cycles -65c to +150c vibration 2056 15g?s constant acceleration 2006 20,000g?s moisture resistance (packaged diodes) 1021 10 days parameter maximum value operating temperature -65c to +175c storage temperature -65c to +175c power dissipation 0.25w @ 25c junction temperature +175 c mounting temperature +320 c for 10 seconds
v3 gaas pin diode chips advanced: data sheets contain information regarding a product m/a-com technology solutions is considering for development. performance is based on target specifications, simulated results, and/or prototype measurements. commitment to develop is not guaranteed. preliminary: data sheets contain information regarding a product m/a-com technology solutions has under development. performance is based on engineering tests. specifications are typical. mechanical outline has been fixed. engineering samples and/or test data may be available. commitment to produce in volume is not guaranteed. ? north america tel: 800.366.2266 ? europe tel: +353.21.244.6400 ? india tel: +91.80.43537383 ? china tel: +86.21.2407.1588 visit www.macomtech.com for addi tional data sheets and product information. m/a-com technology solutions inc. and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice. 2 gaas chip specification @ t amb = +25c part number max. rev. volt. 1 v r < 10 a v dc max. cap. 1 mhz c j @ -10 v pf max. series res. 2 1 ghz r s @ 20 ma ? nominal characteristics carrier lifetime t l @ i for = 10 ma i rev = 6 ma s switching speed 3 7 ghz s ma4gp022-277 50 0.15 1.0 20 10 ma4gp030-277 4 100 0.06 2.0 25 15 notes: 1. v r ( reverse voltage ) is sourced and the resultant reve rse leakage current, ir, is measured to be <10a. 2. chip is mounted into case style ods 30 ceramic package. 3. switching speed is measured between 1 db and 20 db loss in a shunt mounted switch. 4. available as chip with flying lead s. part number is madp-000030-13930g. case style 277 (chip) anode a b c b dimension mils millimeters a 7 .5 .178 .013 b 11 1 .279 .025 c 2.2 .3 .056 .008 typical ttl driver circuit
v3 gaas pin diode chips advanced: data sheets contain information regarding a product m/a-com technology solutions is considering for development. performance is based on target specifications, simulated results, and/or prototype measurements. commitment to develop is not guaranteed. preliminary: data sheets contain information regarding a product m/a-com technology solutions has under development. performance is based on engineering tests. specifications are typical. mechanical outline has been fixed. engineering samples and/or test data may be available. commitment to produce in volume is not guaranteed. ? north america tel: 800.366.2266 ? europe tel: +353.21.244.6400 ? india tel: +91.80.43537383 ? china tel: +86.21.2407.1588 visit www.macomtech.com for addi tional data sheets and product information. m/a-com technology solutions inc. and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice. 3 typical performance @ t amb = +25c ma4gp022 ma4gp030 figure 3. typical capacitance vs. voltage at 1 ghz
v3 gaas pin diode chips advanced: data sheets contain information regarding a product m/a-com technology solutions is considering for development. performance is based on target specifications, simulated results, and/or prototype measurements. commitment to develop is not guaranteed. preliminary: data sheets contain information regarding a product m/a-com technology solutions has under development. performance is based on engineering tests. specifications are typical. mechanical outline has been fixed. engineering samples and/or test data may be available. commitment to produce in volume is not guaranteed. ? north america tel: 800.366.2266 ? europe tel: +353.21.244.6400 ? india tel: +91.80.43537383 ? china tel: +86.21.2407.1588 visit www.macomtech.com for addi tional data sheets and product information. m/a-com technology solutions inc. and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice. 4 ordering information the gaas chip specifications shown in the table on page 2 are for the stand alone di e, package style 277. no te that the table lists the bare die junction capacitance an d that the total capacitance for the base part in an alternative package will differ. the total capacitance in an alternative package can be computed by adding the capacitance shown in the table on page 2 to the parasitic capacitance of the alter native package as defined in the package parasitics table below. the base part numbers are only available in the case styles shown in the package style availability table below. to order, indicate the base part number followed by a dash and the desired package style. for example : the ma4gp030-30 is the ma4gp030 chip in the 30 style package. base part number package styles ma4gp022 137, 277 ma4gp030 30, 120, 276, 277, 1056, 1393 * package style availability package parasitics package style cap. (pf) 30 0.18 120 0.13 137 0.13 276 0.13 277 n/a (chip) 1056 0.20 inductance (nh) 0.40 0.40 0.40 0.40 n/a (chip) 0.20 1393 * see note * see note * style 30 dimension mils millimeters a 121 4 3073 102 b 62 2 1575 51 c 215 10 5461 254 d 91 6 2311 152 e 62 2 1575 51 f 62 2 1575 51 g 20 4 508 102 h 81 2 2057 51 a b style 120 dimension mils millimeters a 53 2 1346 51 b 45 5 1143 127 alternative package styles note: chip with flying leads. inductance and capacitance will vary according to final lead length after installation. b h a c f g d e *note: to order the ma4gp030 chip with flying leads use part number madp-000030-13930g.
v3 gaas pin diode chips advanced: data sheets contain information regarding a product m/a-com technology solutions is considering for development. performance is based on target specifications, simulated results, and/or prototype measurements. commitment to develop is not guaranteed. preliminary: data sheets contain information regarding a product m/a-com technology solutions has under development. performance is based on engineering tests. specifications are typical. mechanical outline has been fixed. engineering samples and/or test data may be available. commitment to produce in volume is not guaranteed. ? north america tel: 800.366.2266 ? europe tel: +353.21.244.6400 ? india tel: +91.80.43537383 ? china tel: +86.21.2407.1588 visit www.macomtech.com for addi tional data sheets and product information. m/a-com technology solutions inc. and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice. 5 alternative package styles (cont?d) cathode a b c style 137 dimension mils mm a 100 10 2540 254 b 20 2 508 51 c 100 5 2540 127 d 4 1 102 25 e 50 max. 1270 max. f 14 max. 356 max. cathode a a b d c e f style 1056 dimension mils mm a 70 5 1778 127 b 37 4 940 102 c 33 3 838 76 d 15 2 381 51 e 12 2 305 51 f 48 5 1219 127 dimension mils mm a 15 5 381 127 b 45 5 1143 127 c 5 max. 127 max. d 53 2 1346 51 e 200 min. 5080 min. f 20 1 508 25 style 1393 a full area cathode anode b c d b e dimension mils mm a 300 50 7.62 1.27 b 12 1 0.305 0.025 c 5 1 0.127 0.025 d 0.25 .05 0.0064 0.0013 e 7 1 0.178 0.025 style 276 e f a b c d d e f
v3 gaas pin diode chips advanced: data sheets contain information regarding a product m/a-com technology solutions is considering for development. performance is based on target specifications, simulated results, and/or prototype measurements. commitment to develop is not guaranteed. preliminary: data sheets contain information regarding a product m/a-com technology solutions has under development. performance is based on engineering tests. specifications are typical. mechanical outline has been fixed. engineering samples and/or test data may be available. commitment to produce in volume is not guaranteed. ? north america tel: 800.366.2266 ? europe tel: +353.21.244.6400 ? india tel: +91.80.43537383 ? china tel: +86.21.2407.1588 visit www.macomtech.com for addi tional data sheets and product information. m/a-com technology solutions inc. and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice. 6 die handling and mounting information handling: all semiconductor chips should be handled with care to avoid damage or contamination from perspiration, salts, and skin oils. the use of plastic tipped tweezers or vacuum pickups is strongly recommended for individual components. bulk handling should ensure that abrasion and mechanical shock are minimized. die attach surface: die can be mounted with an 80au/sn20, eutectic solder preform or electrically conductive silver epoxy. the metal rf and d.c. ground plane mounting surface must be free of contamination and should have a surface flatness of < 0.002?. eutectic die attachment using hot gas die bonder : a work surface temperature of 255 o c is recommended. when hot forming gas is applied, the work area temperature should be approximately 290 o c. the chip should not be exposed to temperatures greater than 320 o c for more than 10 seconds. eutectic die attachment using reflow oven : see application note m538 pgs 13&14 , ?surface mounting instructions? at www.macomtech.com for recommended time-temperature profile. electrically conductive epoxy die attachment: a controlled amount of electrically conductive, silver epoxy, approximately 1?2 mils in thickness, should be used to minimize ohmic and thermal resistance. a thin epoxy fillet should be visible around the perimeter of the chip after placement to ensure full area coverage. cure conductive epoxy per manufacturer?s schedule. typically 150c for 1 hour. wire and ribbon bonding: it is recommended that thermo-compression or thermo-sonic bonding be used with little or no ultrasonic power. the wire or ribbon used should be smaller than the anode contact diameter. a bonder heat stage temperature setting of 200 o c, tool tip temperature of 150c and a force of 18 to 50 grams is suggested. if ul trasonic scrubbing is necessary, the amplitude should be adjusted to the minimum level required to achieve a good bond. use of excessive energy may cause the gaas to fracture and the metallization on the anode to delaminate from the chip. for more detailed handling and assembly instructions, see application note m541 , ?bonding and handling procedures for chip diode devices? at www.macomtech.com.
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